Applications
Applying TCZ's Thin Beam LTPS Processing Technology
TCZ's patented Thin Beam LTPS Processing Technology can be applied in different operational modes including:
- Thin Beam Directional X'tallization (TDX)
- Thin Beam Sequential Lateral Solidification (TB-SLS)
- Thin Beam Excimer Laser Annealing (TB-ELA)
This unique process versatility allows creating low temperature poly silicon material of different microstructure types, and therefore flexible optimization for various applications such as:
- Active matrix liquid crystal displays (AMLCD)
- System on glass integration (SOG)
- In-pixel memory and input display functionality (touch screen, scanner, etc.)
- Next generation organic light emitting diode (OLED) displays
Thin Beam Directional X'tallization (TDX)
TDX produces highly uniform SOG grade LTPS material of highest electron mobility and lowest surface roughness, and with very high throughput:
| • Microstructure: | directional, >10 µm long grains |
| • Electron mobility: | up to 500 cm²/Vs |
| • Surface Roughness | ≤10 nm P-V, ±3 nm RMS |
| • Scan speed: | up to 88 cm²/s |
Thin Beam Sequential Lateral Solidification (TB-SLS)
TB-SLS produces highly uniform SOG grade LTPS material with highest throughput:
| • Microstructure: | directional, 3-4 µm long grains |
| • Electron mobility: | up to 350 cm²/Vs |
| • Surface Roughness | ≤50 nm P-V |
| • Scan speed: | up to 176 cm²/s |
Thin Beam Excimer Laser Annealing (TB-ELA)
TCZ performs ongoing process R&D in order to continuously expand the versatility of Thin Beam laser crystallization. Initial investigations of the TB-ELA process show the potential to produce poly-Si with higher uniformity for critical LCD and OLED applications. Please contact our Sales team for the latest progress.
| • Microstructure: | Random grains of 0.3 µm average size |
| • Electron mobility: | ~100 cm2/Vs |
| • Surface Roughness | 10 nm Ra |
| • Scan speed: | up to 88 cm2/s |